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source gases meaning in Chinese

源气体

Examples

  1. Documentation should be available specifying the purity , other components and possible impurities that may be present in the source gas and at purification steps , as applicable
    如适用,在净化工序的文件中需详细说明这些气体原料的纯度,其它成分和可能存在的杂质。
  2. The micro structure of the films prepared with sih4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd ) and its influence on the photoluminescence and optical properties have systematically studied by the means of the measurements of tem hrem xps sem and raman
    对以硅烷为原料气采用常压化学气相沉积制备的薄膜,利用tem 、 hrem 、 xps 、 sem 、 raman等手段系统研究了沉积温度、退火后处理等制备工艺对薄膜微结构的影响,分析了微结构的成因。
  3. By film thickness measured , fourier transformed infrared spectrometer ( ftir ) analysis , x - ray photoelectron spectroscopy ( xps ) analysis and relative irradiance measurement , the effect of microwave input powers on deposition rates , f / c ratios , bonding configurations of ct - c : f films and the radicals in plasma originating from source gases dissociation is analyzed
    由于微波功率的改变会导致等离子体中电子温度和等离子体密度发生变化,从而造成不同的源气体分解过程,结果微波功率的升高导致了薄膜沉积速率的提高、 f / c比的降低,同时也导致薄膜中cf和cf _ 3基团密度的降低,而保持cf _ 2基团密度接近常数。
  4. The quality of buffer layer and thin films was analyzed by afm , xrd , rheed and xps respectively . the effect of the experimental parameters such as carbonization time , working pressure , c source gas flow rate , carbonization temperature , different carbonization gas and substrate on the carbonization process was studied firstly . it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite , but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too , and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low , but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough , and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature , the size of particles was increased , the rms is decreased and a good single - crystalline carbonization layer could be obtained , but a rough surface was formed at a excessive high temperature ; the rms of
    对于碳化工艺,侧重研究了碳化时间、反应室气压、 c源气体的流量、碳化温度以及不同种类的c源气体、基片取向等因素对碳化层质量的影响,研究结果表明:随着碳化时间的增长,碳化层的晶粒尺寸随之变大,表面粗糙度随之降低,但当碳化到一定时间之后,碳化反应减缓,碳化层的晶粒尺寸以及表面粗糙度的变化幅度变小;碳化层的晶粒尺寸随反应室气压的升高而变大,适中的反应室气压可得到表面比较平整的碳化层;在c源气体的流量相对较小时,碳化层的晶粒尺寸随气体流量的变化不明显,但当气体流量增大到一定程度时,碳化层的晶粒尺寸随气体流量的增大而明显变大,同时,适中的气体流量得到的碳化层表面粗糙度较低;碳化温度较低时,碳化层的晶粒取向不明显,随着碳化温度的升高,碳化层的晶粒尺寸明显变大,且有微弱的单晶取向出现,但取向较差,同时,适中的碳化温度可得到表面平整的碳化层;相比于c _ 2h _ 2 ,以ch _ 4作为c源气体时得到的碳化层表面平整得多;比起si ( 100 ) ,选用si ( 111 )作为基片生长的碳化层的晶粒取向一致性明显更好。
  5. In this thesis , the history , structure . preparation method and basic properties of nano - composite materials and photoluminescence of nanocrystalline silicon have been summarized . research of the novel antireflecting energy saving coating glass has also been presented . the si / sic composite films are prepared with siht and ? 2 ^ 4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd )
    本论文全面介绍了纳米材料,特别是纳米镶嵌复合材料的发展概况、特性、常用的制备方法、常见的几种硅系纳米材料以及有关纳米硅材料的发光,并对新型无光污染节能镀膜玻璃的研制和发展作了概述。
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